Semiconductor device having a strained semiconductor alloy...

Details Semiconductor device having a strained semiconductor alloy... Semiconductor device having a strained semiconductor alloy...

2011-05-10

2011-05-10

Vu, David (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S190000

Reexamination Certificate

active

07939399

ABSTRACT:
A new technique enables providing a stress-inducing alloy having a highly stress-inducing region and a region which is processable by standard processing steps suitable for use in a commercial high volume semiconductor device manufacturing environment. The regions may be formed by a growth process with a varying composition of the growing material or by other methods such as ion implantation. The highly stress-inducing region near the channel region of a transistor may be covered with an appropriate cover.

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Foreign Associate Transmittal Letter dated Jan. 21, 2008.
Translation of Official Communication Issued Nov. 22, 2007.

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