Semiconductor device having a silicided gate electrode and...

Details Semiconductor device having a silicided gate electrode and... Semiconductor device having a silicided gate electrode and...

2004-03-01

2008-03-25

Tran, Long K. (Department: 2818)

Semiconductor device manufacturing: process

Forming schottky junction

Using platinum group metal

C438S581000, C438S583000, C438S630000, C438S651000, C257S412000, C257S757000, C257S768000

Reexamination Certificate

active

07348265

ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device (100), among other possible elements, includes a gate oxide (140) located over a substrate (110), and a silicided gate electrode (150) located over the gate oxide (140), wherein the silicided gate electrode (150) includes a first metal and a second metal.

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Hong-Xiang Mo et al., Formation and Properties of ternary silicide (CoxNi1−x)Si2 thin films, 1998 IEEE, 0-7803-4306-9/98, pp. 271-274.

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