Semiconductor device having a recess channel transistor

Details Semiconductor device having a recess channel transistor Semiconductor device having a recess channel transistor

2006-09-29

2009-11-10

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S209000, C438S268000, C438S270000, C438S274000, C257S220000, C257S328000, C257S330000, C257SE21429, C257SE21621

Reexamination Certificate

active

07615449

ABSTRACT:
The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof and a recess channel region formed in the semiconductor substrate under the active region. A method for fabricating the semiconductor device includes forming a device isolation structure in a semiconductor substrate to form an active region having a recess region at a lower part of sidewalls thereof, a gate insulating film formed over the semiconductor substrate including the recess channel region, and a gate electrode formed over the gate insulating film to fill up the recess channel region.

REFERENCES:
patent: 6476444 (2002-11-01), Min
patent: 2005/0077553 (2005-04-01), Kim et al.
patent: 2005/0250279 (2005-11-01), Son et al.
patent: 2006/0160302 (2006-07-01), Kim et al.
patent: 2006/0192249 (2006-08-01), Kim et al.
patent: 2006/0240607 (2006-10-01), Zhang et al.
patent: 2007/0173007 (2007-07-01), Lee et al.
patent: 2006-275 (2006-01-01), None
Korean Notice of Rejection for App. No. 10-2006-0038825, sent Apr. 24, 2007.

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