Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-23
1999-06-08
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257394, 257245, 257309, 257317, 257349, 257355, 257356, 257360, H01L 2976
Patent
active
059106778
ABSTRACT:
Protection circuits for preventing an internal circuit on a semiconductor substrate from destroying due to an excess voltage are formed on the output end and input end of an internal circuit. The protection circuit on the input end has a gate electrode comprised of a band-like conductive film. This gate electrode is grounded and has a shape zigzagging in a waveform with crests and troughs alternately appearing in a planar view. A drain diffusion layer connected to an output end of the internal circuit is formed in one of two diffusion regions of the surface of the semiconductor substrate that are defined by the gate electrode, and a source diffusion layer grounded is formed in the other region. The source diffusion layer and the drain diffusion layer are formed integral with each other, so that the protection circuit on the input end is substantially constituted of one buffer transistor.
REFERENCES:
patent: 5477407 (1995-12-01), Kobayashi et al.
patent: 5610427 (1997-03-01), Shida
patent: 5777366 (1998-07-01), Contiero et al.
patent: 5838043 (1998-11-01), Yuan
Polgreen et al., Improving the ESD Failure Threshold of Silicided n-MOS Output Transistors by Ensuring Uniform Current Flow. IEEE Transaction on Electron Devices 39-379388 (1992).
Jr. Carl Whitehead
NEC Corporation
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