Semiconductor device having a projecting element region

Details Semiconductor device having a projecting element region Semiconductor device having a projecting element region

1995-09-13

1998-12-01

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257376, 257394, H01L 2976, H01L 2994, H01L 31062

Patent

active

058442782

ABSTRACT:
The present invention provides a semiconductor device which includes a substrate having a projection-shaped semiconductor element region, a gate electrode formed through a gate insulating film on the upper face and side face of the element region, and a first conductivity type source region and drain region provided in a manner to form a channel region on the upper face of the element region across the gate electrode, and which has a high concentration impurity region containing a second conductivity type impurity at a concentration higher than that on the surface of the channel region in the central part of the projection-shaped semiconductor element region.

REFERENCES:
patent: 4979014 (1990-12-01), Hieda et al.
patent: 5463241 (1995-10-01), Kubo
patent: 5512770 (1996-04-01), Hong
Digh Hisamoto et al. "A Fully Depleted Lean-channel Transistor (DELTA)--A novel vertical ultra thin SOI Mosfet--," IEDM, pp. 833-836, Dec. 3, 1989.

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