Semiconductor device having a PMOS device with a source/drain re

Details Semiconductor device having a PMOS device with a source/drain re Semiconductor device having a PMOS device with a source/drain re

1997-12-19

2000-01-11

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438528, H01L 218249

Patent

active

060135468

ABSTRACT:
A semiconductor device is formed which includes a shallow PMOS active region containing a heavy atom p-type dopant material. In an exemplary process for making a PMOS device or portion of a device, at least one PMOS gate electrode is formed over a PMOS device region of a substrate. A PMOS spacer is formed on a sidewall of a PMOS gate electrode. An amorphizing dopant material is selectively implanted into a PMOS active region using the PMOS spacer as a mask. A heavy atom p-type dopant material is selectively implanted into the PMOS active region using the PMOS spacer as a mask. The order of implantation of the amorphizing dopant material and the heavy atom p-type dopant material may be reversed.

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S. Wolf, "MOS Devices and NMOS Process Integration", Silicon Processing for the VLSI Era--Volume II, pp. 354-363 (1990).

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