Semiconductor device having a phosphorus doped PECVD film and a

Details Semiconductor device having a phosphorus doped PECVD film and a Semiconductor device having a phosphorus doped PECVD film and a

1997-03-04

1998-09-29

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438563, H01L 21225, H01L 21336

Patent

active

058145451

ABSTRACT:
Portions of a semiconductor device (10,30) are formed from a dielectric layer (16,38,46) which is deposited using a plasma enhanced chemical vapor deposition (PECVD) process which adds trimethylphosphite as a dopant source during the deposition. A first embodiment forms sidewall spacers (17) adjacent to a gate structure (14) and forms doped regions (19) under the sidewall spacers (17) by annealing the dielectric layer (16) and driving phosphorus into a substrate (11). A second embodiment uses the trimethylphosphite doped film as an interlevel dielectric layer (38) which can be planarized to provide a flat surface for the formation of metal interconnect lines. A third embodiment of the present invention uses the trimethylphosphite doped film as a passivation layer (46) which is deposited in a single step process and has a phosphorus concentration to getter mobile ions.

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