Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2009-06-09
2010-11-16
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S411000, C438S421000, C438S422000, C438S619000, C438S270000, C257S276000, C257S522000, C257S410000, C257SE21564, C257SE21573
Reexamination Certificate
active
07833890
ABSTRACT:
Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.
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European Search Report corresponding to European Application No. 07120149.5 dated Jan. 22, 2009.
Kim Suk-pil
Kim Won-joo
Koo June-mo
Lee Jong-jin
Park Yoon-dong
Harness, Dickey & Pierce P.L.C
Samsung Electronics Co,. Ltd.
Singal Ankush K
Toledo Fernando L
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