Semiconductor device having a nitrogen doped polysilicon layer

Details Semiconductor device having a nitrogen doped polysilicon layer Semiconductor device having a nitrogen doped polysilicon layer

1997-07-16

1999-03-09

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257754, 257755, 257756, H01L 29788

Patent

active

058804986

ABSTRACT:
A semiconductor device comprising, a semiconductor substrate, a first gate insulator film formed on the semiconductor substrate, a floating gate formed on the first gate insulator film, a second insulator film formed on the floating gate, a control gate formed on the second insulator film, and a silicon film doped with nitrogen and an impurity, and interposed between the floating gate and the second gate insulator film and/or between the second gate insulator film and the control gate.

REFERENCES:
patent: 5652166 (1997-07-01), Sun et al.
patent: 5744845 (1998-04-01), Sayama et al.
patent: 5747882 (1998-05-01), Wang et al.
patent: 5804868 (1998-09-01), Kobayashi et al.

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