Semiconductor device having a multi-layered dielectric structure

Details Semiconductor device having a multi-layered dielectric structure Semiconductor device having a multi-layered dielectric structure

1992-07-06

1996-03-12

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257298, 257324, 3613063, 361312, 361313, H01L 27108, H01L 29792, H01L 2976, H01L 2994

Patent

active

054988900

ABSTRACT:
A semiconductor device and a manufacturing method thereof are disclpsed, the semiconductor device comprising: a first conductive layer; an oxide layer formed upon the first conductive layer; a nitride layer composed of multiple sublayers formed upon the oxide layer; another oxide layer formed upon the nitride layer in the form of multiple sublayers; and a second conductive layer formed upon the structure obtained through the preceding steps. Due to the unique feature of the nitride layer composed of multiple sublayers, the electrical characteristics of the semiconductor device according to the present invention is improved, and the nitride layer according to the present invention is widely applicable to semiconductor devices.

REFERENCES:
patent: 5051794 (1991-09-01), Mori

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