Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-26
2006-09-26
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S408000, C257S372000
Reexamination Certificate
active
07112856
ABSTRACT:
A semiconductor device includes an insulated gate electrode pattern formed on a well region. The semiconductor device further includes a sidewall spacer formed on sidewalls of the gate electrode pattern. A source region and a drain region are formed adjacent opposite sides of the gate pattern. In accordance with one embodiment of the present invention, one of the source or drain regions includes a first-concentration impurity region formed under the sidewall spacer. The semiconductor device further includes a silicide layer formed within the well region wherein at least a part of the silicide layer contacts a portion of the well region to bias the well region. A method of manufacturing the semiconductor device is also provided.
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Cho Hoo-Sung
Cho Kang-Sik
Kim Gyu-Chul
Marger & Johnson & McCollom, P.C.
Richards N. Drew
Samsung Electronics Co,. Ltd.
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