Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1995-08-07
1999-10-05
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257750, 257763, 257764, 257770, 257773, 257751, H01L 2348, H01L 2352, H01L 2940
Patent
active
059629231
ABSTRACT:
The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact. The carrier layer preferably comprises a layer formed by ionizing the flux of sputter deposition maternal partially reacting the flux with a gas, and depositing the resulting material on a substrate.
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Forster John
Xu Zheng
Yao Tse-Yong
Applied Materials Inc.
Saadat Mahshid
Wilson Allan R.
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