Semiconductor device having a liner defining the depth of an act

Details Semiconductor device having a liner defining the depth of an act Semiconductor device having a liner defining the depth of an act

1997-12-19

2000-08-08

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438301, H01L 21336

Patent

active

061001481

ABSTRACT:
A semiconductor device having a liner which defines the depth of an active region and a process for fabricating such a device is disclosed. The use of a liner can, for example, allow the formation of shallower source/drain regions and enhance the performance of the device. In accordance with one aspect of the process, a semiconductor device is formed by forming a gate electrode over a substrate and forming a liner in the substrate adjacent to the gate electrode. An active region is then formed in the substrate, whereby the depth of an active region is defined by the liner. The liner can be formed from several materials including, for example, n-type and p-type dopants and/or oxygen-bearing species.

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U.S. application No. 08/993,223, Gardner et al., filed Dec. 18, 1997.

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