Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-12
2006-12-12
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S664000, C438S655000, C438S649000, C438S669000, C438S721000, C438S583000, C438S300000, C438S230000, C438S618000, C438S744000, C438S791000, C438S199000, C257S536000, C257SE21166
Reexamination Certificate
active
07148143
ABSTRACT:
The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a silicided gate electrode (150) located over a substrate (110), the silicided gate electrode (150) having gate sidewall spacers (160) located on sidewalls thereof. The semiconductor device (100) further includes source/drain regions (170) located in the substrate (110) proximate the silicided gate electrode (150), and silicided source/drain regions (180) located in the source/drain regions (170) and at least partially under the gate sidewall spacers (160).
REFERENCES:
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patent: 6794313 (2004-09-01), Chang
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Bu Haowen
Jiang Ping
Lu Jiong-Ping
Montgomery Clint
Yu Shaofeng
Ahmadi Mohsen
Brady III W. James
Lebentritt Michael
McLarty Peter K.
Telecky , Jr. Frederick J.
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