Semiconductor device having a field effect source/drain region

Details Semiconductor device having a field effect source/drain region Semiconductor device having a field effect source/drain region

2009-11-20

2011-10-11

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S063000, C365S072000, C365S185170, C257S044000, C257S256000, C257S347000, C257SE21210, C438S186000, C438S257000

Reexamination Certificate

active

08036031

ABSTRACT:
A semiconductor device includes an active region defined in a semiconductor substrate, and gate electrodes crossing over the active region. Source/drain regions are defined in the active region on two sides of the gate electrode. At least one of the source/drain regions is a field effect source/drain region generated by a fringe field of the gate. The other source/drain region is a PN-junction source/drain region having different impurity fields and different conductivity than the substrate. At least one of the source/drain regions is a field effect source/drain region. Accordingly, a short channel effect is reduced or eliminated in the device.

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patent: 10-093083 (1998-04-01), None

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