Semiconductor device having a contact window including a...

Details Semiconductor device having a contact window including a... Semiconductor device having a contact window including a...

2005-07-19

2005-07-19

Smoot, Stephen W. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C438S640000

Reexamination Certificate

active

06919640

ABSTRACT:
Semiconductor devices having a contact window and fabrication methods thereof are provided. A lower dielectric layer, conductive patterns and an upper dielectric layer are formed sequentially on a semiconductor substrate. The lower dielectric layer has a higher isotropic etch rate than that of the upper dielectric layer. The upper dielectric layer and the lower dielectric layer are patterned by anisotropic etching to form a trench without exposing the semiconductor substrate. The resultant structure is subject to isotropic etching to expose the substrate and to form a contact window having a wider width in a lower region than in an upper region without damaging the semiconductor substrate.

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English language abstract of Korean Publication No. 1999-0046930, Jul. 1999.

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