Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Wire contact – lead – or bond
Patent
1997-02-13
1998-09-29
Arroyo, Teresa M.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Wire contact, lead, or bond
257786, H01L 2348, H01L 2352
Patent
active
058148930
ABSTRACT:
Bond pads (394, 106) and bond pad openings (62, 108) are formed such that the bond pad openings (62, 108) are asymmetric to the conductive sections (398, 106) of the bond pads (394, 106). If the bond pads are more likely to lift from the scribe line side of the bond pad (394, 106), the bond pad openings (62, 108) are formed such that the passivation layer (52) overlies more of the conductive section (398, 106) near the scribe line (40). If the bond pads (394, 106) are more likely to lift from the other side, the passivation layer (52) overlies more of the other side of the conductive section (398, 106). In addition to reducing the risk of lifting, contamination problems should also be reduced.
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Howard Clifford M.
Hsu Ting-Chen
Jamison Stephen G.
Travis Edward O.
Arroyo Teresa M.
Meyer George R.
Motorola Inc.
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