Semiconductor device for reducing forward voltage by using...

Details Semiconductor device for reducing forward voltage by using... Semiconductor device for reducing forward voltage by using...

2005-02-16

2009-08-11

Cao, Phat X (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S332000, C257SE27091

Reexamination Certificate

active

07573096

ABSTRACT:
MOS FETs are formed by a drain layer101, a drift layer102, P-type body areas103, N+-type source areas105, gate electrodes108, a source electrode film110, and a drain electrode film111. In parallel to the MOS FETs, the drain layer101, the drift layer102, the P−-type diffusion area109, and the source electrode film110form a diode. The source electrode film110and the P−-type diffusion area109form an Ohmic contact. The total amount of impurities, which function as P-type impurities in each P-type body area103, is larger than the total amount of impurities, which function as P-type impurities in the P−-type diffusion area109.

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International Search Report mailed Apr. 19, 2005 (Japanse and English Translation).
Written Opinion dated Apr. 19, 2005.

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