Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-16
2011-08-16
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S386000, C438S427000, C257SE21549, C257SE21651
Reexamination Certificate
active
07998808
ABSTRACT:
A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.
REFERENCES:
patent: 4495025 (1985-01-01), Haskell
patent: 5262002 (1993-11-01), Grewal et al.
patent: 5904540 (1999-05-01), Sheng et al.
patent: 6872632 (2005-03-01), Ibara
patent: 6998666 (2006-02-01), Beintner et al.
patent: 7638409 (2009-12-01), Yoneda
patent: 7671441 (2010-03-01), Henson
patent: 2002/0171118 (2002-11-01), Mandelman et al.
patent: 2007/0138545 (2007-06-01), Lin et al.
patent: 2007/0138547 (2007-06-01), Nakamura
patent: 2007/0238251 (2007-10-01), Liau et al.
patent: 2008/0001214 (2008-01-01), Yamaoka et al.
patent: 2008/0153254 (2008-06-01), Yoneda
patent: 2009/0258467 (2009-10-01), Kim
patent: 2009/0263952 (2009-10-01), Viswanathan et al.
patent: 2010/0105188 (2010-04-01), Moens et al.
patent: 2011/0003458 (2011-01-01), Lee et al.
Girdhar Dev Alok
Henson Timothy
Jones David Paul
Viswanathan Vijay
Farjami & Farjami LLP
International Rectifier Corporation
Lindsay, Jr. Walter L
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