Semiconductor device fabrication using spacers

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S386000, C438S427000, C257SE21549, C257SE21651

Reexamination Certificate

active

07998808

ABSTRACT:
A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.

REFERENCES:
patent: 4495025 (1985-01-01), Haskell
patent: 5262002 (1993-11-01), Grewal et al.
patent: 5904540 (1999-05-01), Sheng et al.
patent: 6872632 (2005-03-01), Ibara
patent: 6998666 (2006-02-01), Beintner et al.
patent: 7638409 (2009-12-01), Yoneda
patent: 7671441 (2010-03-01), Henson
patent: 2002/0171118 (2002-11-01), Mandelman et al.
patent: 2007/0138545 (2007-06-01), Lin et al.
patent: 2007/0138547 (2007-06-01), Nakamura
patent: 2007/0238251 (2007-10-01), Liau et al.
patent: 2008/0001214 (2008-01-01), Yamaoka et al.
patent: 2008/0153254 (2008-06-01), Yoneda
patent: 2009/0258467 (2009-10-01), Kim
patent: 2009/0263952 (2009-10-01), Viswanathan et al.
patent: 2010/0105188 (2010-04-01), Moens et al.
patent: 2011/0003458 (2011-01-01), Lee et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device fabrication using spacers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device fabrication using spacers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device fabrication using spacers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2687326

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.