Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-03-21
2000-05-02
Fahmy, Wael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438282, 438291, 438305, 438358, 438360, 438363, 438370, 438373, 438420, 438526, 438527, H01L 218238
Patent
active
060571845
ABSTRACT:
A semiconductor device and method of fabrication for such device in which a P- epitaxial layer is positioned above a P++ substrate. A P++ buried layer implant is positioned within the device between the P++ substrate and the P- epitaxial layer. A connecting p+ implant is placed within the epitaxial layer above the buried p+ blanket layer implant. In one exemplary embodiment, the device includes a shallow P-well with the P+ connecting implant in a position within the epitaxial layer connecting the shallow P-well and the buried P+ blanket implant layer.
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Brown Jeffrey Scott
Furkay Stephen Scott
Gauthier, Jr. Robert John
Tian Xiaowei
Tong Minh Ho
Fahmy Wael
International Business Machines - Corporation
Pham Long
Shkurko Eugene I.
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