Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2005-11-01

2005-11-01

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S763000, C438S765000, C438S792000

Reexamination Certificate

active

06960502

ABSTRACT:
A reduction of a leakage current as well as a decrease in the thickness of an insulating film is realized in a semiconductor device. To this end, a silicon oxide film and a silicon nitride film are formed on a substrate, which is then heated to a temperature within a range of 20° C.–600° C. so that a plasma nitridation process can be performed on the silicon nitride film. Further, a thermal process is performed in a non-oxide gas atmosphere. By performing these processes, the gate leakage current can be significantly reduced in the formed gate insulator, and the silicon oxide-equivalent thickness of the insulating film can be significantly decreased as well.

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