Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2008-06-24

2008-06-24

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000

Reexamination Certificate

active

07390707

ABSTRACT:
The semiconductor device fabrication method comprising the step of forming a gate electrode on a semiconductor substrate; the step of forming a source/drain diffused layer in the semiconductor substrate on both sides of the gate electrode; the step of burying a silicon germanium layer in the source/drain diffused layer; the step of forming an amorphous layer at an upper part of the silicon germanium layer; the step of forming a nickel film on the amorphous layer; and the step of making thermal processing to react the nickel film and the amorphous layer with each other to form a silicide film on the silicon germanium layer.

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J. Seger et al.; “Morphological instability of NiSi1-uGeuon single-crystal and polycrystalline Si1-xGex”, Journal of Applied Physics, vol. 96, No. 4, Aug. 15, 2004, pp. 1919-1928.
Anne Lauwers et al.; “Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies”, American Vacuum Society, J. Vac. Sci. Technol. vol. 19, No. 6, Nov./Dec. 2001, pp. 2026-2037.
Chinese Office Action dated Feb. 29, 2008 issued in corresponding Application No. 200510107112.8.

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