Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

1997-11-26

2000-01-04

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438142, H01L 21336

Patent

active

06010936&

ABSTRACT:
A semiconductor device fabrication method and resulting device in which a gate insulating film is formed on a semiconductor substrate, a gate electrode is formed on the gate insulating film, a gate cap is formed on the gate electrode, a heavy density impurity region is formed in the substrate and outside the gate electrode, first side walls are formed on sides of the gate electrode, the gate cap and the gate insulating film. The substrate outside the gate insulating film is etched down to a portion having a highest impurity density, and a light doping region surrounding the heavy impurity region is formed in the substrate. The method and resulting device prevents a hot carrier from being injected into a gate oxide film or a side wall, and reduces the generation of a junction current leakage and a short channel.

REFERENCES:
patent: 5338703 (1994-08-01), Matsuoka
patent: 5362982 (1994-11-01), Hirase et al.
patent: 5824439 (1996-08-01), Lee

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