Semiconductor device fabricating method

Details Semiconductor device fabricating method Semiconductor device fabricating method

2009-11-13

2011-11-29

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21634, C257SE21639

Reexamination Certificate

active

08067283

ABSTRACT:
A semiconductor device fabricating method is described. The semiconductor device fabricating method includes providing a substrate. A first gate insulating layer and a second gate insulating layer are formed on the substrate, respectively. A gate layer is blanketly formed. A portion of the gate layer, the first gate insulating layer and the second gate insulating layer are removed to form a first gate, a remaining first gate insulating layer, a second gate and a remaining second gate insulating layer. The remaining first gate insulating layer not covered by the first gate has a first thickness, and the remaining second gate insulating layer not covered by the second gate has a second thickness, wherein a ratio between the first thickness and the second thickness is about 10 to 20. A pair of first spacers and a pair of second spacers are formed on sidewalls of the first gate and the second gate, respectively.

REFERENCES:
patent: 6033943 (2000-03-01), Gardner
patent: 6168958 (2001-01-01), Gardner et al.
patent: 6261978 (2001-07-01), Chen et al.
patent: 2005/0059195 (2005-03-01), Curro

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