Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-06
2009-12-29
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S195000, C438S259000, C438S275000, C257SE21370, C257SE21384, C257SE21428
Reexamination Certificate
active
07638395
ABSTRACT:
A method for fabricating a semiconductor device is provided which has first and second regions, transistors of different conductivity types being formed on parts of a substrate corresponding to the first and second regions. The method includeujs the steps of: (a) forming a first insulating film to cover the parts of the substrate corresponding to the first and second regions; (b) forming a first thin film on the first insulating film, the first thin film having a relatively higher etching rate than the first insulating film in plasma etching using a halogen gas; and (c) removing a part of the first thin film corresponding to the first region by the plasma etching using a mask covering the second region and modifying a part of the first insulating film corresponding to the first region.
REFERENCES:
patent: 2004/0191974 (2004-09-01), Gilmer et al.
patent: 2006/0046523 (2006-03-01), Kavalieros et al.
patent: 2008/0173946 (2008-07-01), Zhu et al.
Lai, C.S. et al., “Effects of Post CF4Plasma Treatment on the HfO2Thin Film,” Japanese Journal of Applied Physics, Vo. 44, No. 4B, 2005, pp. 2307-2310.
Lee Cheung
McDermott Will & Emery LLP
Mulpuri Savitri
Panasonic Corporation
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