Semiconductor device fabricating method

Details Semiconductor device fabricating method Semiconductor device fabricating method

1998-09-10

2000-12-19

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

254672, 254238, H01L 218242

Patent

active

061626775

ABSTRACT:
In a semiconductor device fabricating method for fabricating a semiconductor device having a high-density region in which transistors are arranged with a relatively high density, and a low-density region in which transistors are arranged in with a relatively low density, a silicon nitride film of a thickness great enough for the silicon nitride film to serve as a stopper is deposited over the entire surface of the silicon wafer, so that regions between the transfer gates in the high-density region may not be blocked up after removing side walls formed in the entire transistor region. A part of the silicon nitride film in the low-density region, namely, a peripheral circuit region, is removed.

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