Semiconductor device employing precipitates for increased...

Details Semiconductor device employing precipitates for increased... Semiconductor device employing precipitates for increased...

2011-01-11

2011-01-11

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S783000, C257SE29345

Reexamination Certificate

active

07867861

ABSTRACT:
A method for fabricating a semiconductor device including implanting a selected material at a desired target depth below a surface of a silicon substrate, performing an annealing process to create a band of precipitates formed from the selected material and the silicon of the silicon substrate at the desired target depth, and forming a source region and a drain region in the substrate such that a channel region there between is positioned above the band of precipitates, wherein the desired target depth is such that a desired separation distance is achieved between the channel region and the band of precipitates, and wherein an average lattice constant of the band of precipitates is different from the average lattice constant of the silicon substrate so as to cause a stress in the channel region.

REFERENCES:
patent: 6621131 (2003-09-01), Murthy et al.
patent: 6885084 (2005-04-01), Murthy et al.
patent: 7192894 (2007-03-01), Bu et al.
patent: 7226834 (2007-06-01), Bu et al.
patent: 2004/0253791 (2004-12-01), Sun et al.
patent: 2005/0184311 (2005-08-01), Murthy et al.
patent: 2006/0081875 (2006-04-01), Lin et al.
patent: 2006/0151832 (2006-07-01), Murthy et al.
patent: 2009/0085110 (2009-04-01), Giles et al.

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