Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S384000, C257SE29266
Reexamination Certificate
active
10989073
ABSTRACT:
A semiconductor device formed on a semiconductor substrate and a method of forming the same. In one embodiment, the semiconductor device includes a gate over the semiconductor substrate and a dielectric liner on a sidewall of the gate. The semiconductor device also includes an extension spacer adjacent and extending laterally beyond the dielectric liner along the semiconductor substrate. The semiconductor device further includes a source/drain located below an upper surface of the semiconductor substrate and adjacent a channel region under the gate. The source/drain extends under the dielectric liner and the extension spacer. The semiconductor device still further includes a silicide region over a portion of the source/drain and extending laterally beyond the extension spacer along the semiconductor substrate. Thus, the extension spacer is interposed between the dielectric liner and the silicide region located over a portion of the source/drain.
REFERENCES:
patent: 6274446 (2001-08-01), Agnello et al.
patent: 6642119 (2003-11-01), Pelella et al.
patent: 6753574 (2004-06-01), Yamaguchi et al.
patent: 6812073 (2004-11-01), Bu et al.
patent: 2002/0081794 (2002-06-01), Ito
patent: 2002/0130378 (2002-09-01), Forbes et al.
patent: 2005/0116360 (2005-06-01), Huang et al.
Shimizu, A., et al., “Local Mechanical Stress Control (LMC): A New Technique for CMOS-Performance Enhancement,” IEDM, 2001, pp. 433-436, IEEE, Los Alamitos, CA.
Chen Kuang-Hsin
Huang Chien-Chao
Lee Di-Hong
Wen Cheng-Kuo
Zhong Tang-Xuan
Liu Benjamin Tzu-Hung
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Tran Minhloan
LandOfFree
Semiconductor device employing an extension spacer and a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device employing an extension spacer and a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device employing an extension spacer and a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3728873