Semiconductor device, design method and structure

Details Semiconductor device, design method and structure Semiconductor device, design method and structure

2011-06-28

2011-06-28

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S227000

Reexamination Certificate

active

07968393

ABSTRACT:
A semiconductor device can include at least a first diffusion region formed by doping a semiconductor substrate and at least a second diffusion region formed by doping the semiconductor substrate that is separated from the first diffusion region by an isolation region. At least a first conductive line can comprise a semiconductor material formed over and in contact with the first diffusion region and the second diffusion region. A portion of the first conductive line in contact with the first diffusion region is doped to an opposite conductivity type as the first diffusion region. At least a second conductive line comprising a semiconductor material is formed in parallel with the first conductive line and over and in contact with the first diffusion region and the second diffusion region. A portion of the second conductive line can be in contact with the first diffusion region and doped to a same conductivity type as the first diffusion region. A portion of the second conductive line in contact with the second diffusion region can be doped to a same conductivity type as the second diffusion region.

REFERENCES:
patent: 3412286 (1968-11-01), Grebene
patent: 4228367 (1980-10-01), Brown
patent: 4333224 (1982-06-01), Buchanan
patent: 5618688 (1997-04-01), Reuss
patent: 5773891 (1998-06-01), Delgado
patent: 7598133 (2009-10-01), Moniwa et al.
patent: 2002/0197779 (2002-12-01), Evans
patent: 2007/0096144 (2007-05-01), Kapoor
patent: 2007/0262793 (2007-11-01), Kapoor
patent: 2008/0099873 (2008-05-01), Vora
patent: 2208967 (1989-04-01), None
patent: 60258948 (1985-12-01), None
U.S. Appl. No. 11/590,265, Vora, Madhukar.

Affiliated with

Also associated with

Rating

Semiconductor device, design method and structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, design method and structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, design method and structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2656837