Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-07-19
2011-07-19
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S237000, C438S396000, C257S324000, C257SE21334, C257SE29308
Reexamination Certificate
active
07981742
ABSTRACT:
A method of fabricating a semiconductor device is provided. The method comprises: (a) providing a first and a second conductor; (b) providing a conductive layer; (c) forming a part of the conductive layer into a data storage layer by a plasma oxidation process, wherein the data storage layer is positioned between the first and the second conductor.
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Chinese language office action dated Apr. 1, 2011.
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Chang Kuo-Pin
Chien Wei-Chih
Hsieh Kuang-Yeu
Lai Erh-Kun
Macronic International Co., Ltd.
Thomas|Kayden
Toledo Fernando L
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