Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2006-08-01
2006-08-01
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S178000, C257S418000, C257S669000, C257S778000
Reexamination Certificate
active
07084517
ABSTRACT:
A semiconductor device connecting structure is provided for connecting a semiconductor IC to a substrate. A bonding layer is placed between the substrate and the semiconductor IC to accomplish adhesion therebetween. Sufficient heat and pressure are applied to the bonding layer to create spaces therein which deform during relative movement between the semiconductor IC and substrate thereby maintaining consistent electrical contact between the semiconductor contact bumps and electrodes on the substrate.
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Harness & Dickey & Pierce P.L.C.
Jr. Carl Whitehead
Mitchell James M.
Seiko Epson Corporation
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