Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2006-03-07
2006-03-07
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
C257S351000, C257S371000, C257S385000, C257S407000, C257S757000, C257S768000, C257S769000
Reexamination Certificate
active
07009279
ABSTRACT:
In semiconductor devices, a semiconductor device is provided which is high in reliability while suppressing changes in characteristics such as threshold voltages. In a semiconductor device which has a gate dielectric film above a semiconductor substrate and also has above the gate dielectric film a gate electrode film made of silicon germanium chosen as its main constituent material, or alternatively in a semiconductor device which has beneath the gate dielectric film a channel made of silicon as its main constituent material and which has below the channel a channel underlayer film made of silicon germanium as its main constituent material, a specifically chosen dopant, such as cobalt (Co) or carbon (C) or nitrogen (N), is added to the gate electrode and the channel underlayer film, for use as the unit for suppressing diffusion of germanium in the gate electrode or in the channel underlayer film.
REFERENCES:
patent: 5608266 (1997-03-01), Agnello et al.
patent: 6214679 (2001-04-01), Murthy et al.
patent: 6252283 (2001-06-01), Gardner et al.
patent: 2000-077425 (2000-03-01), None
patent: 2000-269501 (2000-09-01), None
patent: 2002-134741 (2002-05-01), None
patent: 2002-184993 (2002-06-01), None
Journal of Applied Physics(Sep. 1983), 54(9):4877.
Thomas Kwok, et al., “Molecular-Dynamics Studies of Grain-Boundary . . . ,”Physical Review B(1984), 29:5367-69.
Ikeda Shuji
Iwasaki Tomio
Kumagai Yukihiro
Nasu Shingo
Ohta Hiroyuki
Hitachi , Ltd.
Townsend and Townsend / and Crew LLP
Tran Mai-Huong
Trecenti Technologies, Inc.
LandOfFree
Semiconductor device configured for suppressed germanium... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device configured for suppressed germanium..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device configured for suppressed germanium... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3542681