Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-09
2010-10-19
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S329000, C257S331000, C438S259000
Reexamination Certificate
active
07816216
ABSTRACT:
A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor gate, shallow trench isolation, and an isolation material separating a transistor source and drain are disclosed. Device structures formed by the method are also described.
REFERENCES:
patent: 6294476 (2001-09-01), Lin et al.
patent: 6586800 (2003-07-01), Brown
patent: 6835609 (2004-12-01), Lee et al.
patent: 7009250 (2006-03-01), Mouli
patent: 2001/0023960 (2001-09-01), Soga et al.
patent: 2006/0049455 (2006-03-01), Jang et al.
patent: 2006/0113590 (2006-06-01), Kim et al.
patent: 2006/0263991 (2006-11-01), Lee
patent: 2007/0063270 (2007-03-01), Cho et al.
patent: 2008/0003753 (2008-01-01), Seo et al.
patent: 2008/0119020 (2008-05-01), Grisham et al.
J.Y. Kim et al.; S-RCAT(Sphere-shaped-Recess-Channel-Array-Transistor) Technology for 70nm DRAM feature size and beyon, VLSI Technology 2005, Digest of Technical Papers, 2005 Symposium on ; Jun. 14-16, 2005; pp. 34-35; IEEE Explore.
Han Jonathan
Micro)n Technology, Inc.
Vu David
Wells St. John P.S.
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