Semiconductor device comprising transistor and capacitor and...

Details Semiconductor device comprising transistor and capacitor and... Semiconductor device comprising transistor and capacitor and...

2008-02-14

2010-12-28

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S171000, C438S190000, C438S238000, C438S329000, C438S381000, C438S396000, C438S397000, C438S398000, C438S399000

Reexamination Certificate

active

07858465

ABSTRACT:
A semiconductor device according to an embodiment of the present invention includes: a transistor including, a gate insulator formed of an insulating layer deposited on a substrate, and a gate electrode formed of an electrode layer deposited on the insulating layer; a capacitor including, a first capacitor electrode formed of the electrode layer, a first capacitor insulator formed on the first capacitor electrode, a second capacitor electrode formed on the first capacitor insulator, a second capacitor insulator formed on the second capacitor electrode, and a third capacitor electrode formed on the second capacitor insulator; and line patterns which are in contact with a contact plug for the transistor, a contact plug for the first capacitor electrode, a contact plug for the second capacitor electrode, and the third capacitor electrode.

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