Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Patent
1996-06-03
1997-05-20
Whitehead, Jr., Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
257738, 257751, 257780, 257781, H01L 2348, H01L 2352, H01L 2940
Patent
active
056314990
ABSTRACT:
A semiconductor device having a bump electrode includes a first conductive layer formed on a predetermined portion of a substrate. An insulating layer is formed on the substrate and the first conductive layer. The insulating layer has an opening portion such that a predetermined portion of the first conductive layer is exposed. A second conductive layer is formed on the first conductive layer, a side wall of the opening portion of the insulating layer, and an upper surface of the insulating layer. A third conductive layer is formed to cover at least the insulating layer on the first conductive layer and the second conductive layer along the portion. A fourth conductive layer is formed on the third conductive layer to have an over hang portion. A side etch portion is formed surrounded with an over hang portion of the fourth conductive layer, the third conductive layer, and the insulating layer.
REFERENCES:
patent: 5059553 (1991-10-01), Berndimaier et al.
patent: 5108950 (1992-04-01), Wakabayashi et al.
Arai Takashi
Hosomi Eiichi
Miyamoto Ryouichi
Shibasaki Koji
Takubo Chiaki
Kabushiki Kaisha Toshiba
Whitehead Jr. Carl W.
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