Semiconductor device comprising a discontinuous region...

Details Semiconductor device comprising a discontinuous region... Semiconductor device comprising a discontinuous region...

2005-11-08

2005-11-08

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S392000

Reexamination Certificate

active

06963115

ABSTRACT:
Gates of pMISFETs which need high current driving capability are high-driving-capability gates placed in discontinuous active regions or high-driving-capability gates disposed in two-input active regions. Gate of pMISFETs which do not need high current driving capability are normal gates arranged in continuous active regions. Since the high-driving-capability gates are provided in the discontinuous active regions or the two-input active regions, pMISFETs with high driving capability is achieved by utilizing light holes created due to a lattice distortion.

REFERENCES:
patent: 6448618 (2002-09-01), Inaba et al.
patent: 2004/0140485 (2004-07-01), Matsuzaki et al.

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