Semiconductor device capacitor fabrication method

Details Semiconductor device capacitor fabrication method Semiconductor device capacitor fabrication method

2007-12-17

2009-12-29

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S236000, C438S253000, C257S306000, C257SE21646

Reexamination Certificate

active

07638389

ABSTRACT:
A semiconductor device capacitor fabrication method that is capable of enabling the simultaneous use of an oxide capacitor and a PIP capacitor of a semiconductor device depending upon whether metal line terminals are used. The semiconductor device capacitor fabrication method can include forming an active region and a first gate electrode over a semiconductor substrate, partially depositing a silicon nitride layer, over which a capacitor will be formed, over the first gate electrode, forming a second gate electrode over the silicon nitride, sequentially forming a first insulation layer and a second insulation layer over the resultant structure and forming line terminals extending through the first insulating layer and the second insulating layer for a transistor and a capacitor.

REFERENCES:
patent: 6444554 (2002-09-01), Adachi et al.
patent: 6699726 (2004-03-01), Hidaka et al.
patent: 10-2002-81798 (2002-10-01), None
patent: 10-2004-41253 (2004-05-01), None

Affiliated with

Also associated with

Rating

Semiconductor device capacitor fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device capacitor fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device capacitor fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4142348