Semiconductor device and wire bonding method

Details Semiconductor device and wire bonding method Semiconductor device and wire bonding method

2010-03-19

2010-10-26

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S777000, C257S666000, C257SE23024, C257SE21509, C438S617000

Reexamination Certificate

active

07821140

ABSTRACT:
A semiconductor device has a first layer pressing portion that is formed by crushing a ball neck formed by bonding an initial ball onto a first layer pad of a first layer semiconductor die and pressing the side of a wire folded onto the crushed ball neck, a first wire extended in the direction of a lead from the first layer pressing portion, and a second wire that is looped from a second layer pad of a second layer semiconductor die toward the first layer pressing portion and joined onto the second layer pad side of the first layer pressing portion. Thereby, the connection of wires is performed at a small number of times of bonding, while reducing damages caused on the semiconductor dies.

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