Semiconductor device and semiconductor device manufacturing meth

Details Semiconductor device and semiconductor device manufacturing meth Semiconductor device and semiconductor device manufacturing meth

1998-06-05

2000-03-07

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438275, 438585, H01L 218238

Patent

active

060339446

ABSTRACT:
A semiconductor device is provided and contains a semiconductor substrate, a first transistor, and a second transistor. The first transistor is formed on the semiconductor substrate and has a first gate electrode. The second transistor is formed on the semiconductor substrate and has a second gate electrode. Also, the thickness of the first gate electrode is different than the thickness of the second gate electrode. Also, a method for forming the semiconductor device is provided.

REFERENCES:
patent: 5021354 (1991-06-01), Pfiester
patent: 5278085 (1994-01-01), Maddox, III et al.
patent: 5567642 (1996-10-01), Kim et al.
patent: 5595922 (1997-01-01), Tigelaar et al.
patent: 5677563 (1997-10-01), Crinin et al.

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