Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2006-08-02
2009-12-29
Chu, Chris C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257SE23020, C257S734000, C257S784000, C438S612000
Reexamination Certificate
active
07638886
ABSTRACT:
A semiconductor device including: a semiconductor layer; an electrode pad provided above the semiconductor layer; an insulating layer provided above the electrode pad and having an opening which exposes at least part of the electrode pad; and a metal electrode provided at least in the opening and including a first portion provided above the electrode pad, and a second portion provided above part of the insulating layer positioned outside the electrode pad, an area of a top surface of the second portion being larger than an area of a top surface of the first portion.
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Shindo Akinori
Takano Michiyoshi
Chu Chris C
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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