Semiconductor device and radio communication device

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device

Reexamination Certificate

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Details

C257S566000, C257SE27053, C257SE27076

Reexamination Certificate

active

07622756

ABSTRACT:
A technology which allows a reduction in the thermal resistance of a semiconductor device and the miniaturization thereof is provided. The semiconductor device has a plurality of unit transistors Q, transistor formation regions3a, 3b, and3eeach having a first number (seven) of the unit transistors Q, and transistor formation regions3cand3deach having a second number (four) of the unit transistors Q. The transistor formation regions3cand3dare located between the transistor formation regions3a, 3b, 3e, and3fand the first number is larger than the second number.

REFERENCES:
patent: 6376898 (2002-04-01), Uda et al.
patent: 6545340 (2003-04-01), Higgs et al.
patent: 2001-237319 (2001-08-01), None
patent: 2004-6531 (2004-01-01), None

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