Semiconductor device and production thereof

Details Semiconductor device and production thereof Semiconductor device and production thereof

1997-06-24

2000-06-27

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438592, 438593, H01L 218238

Patent

active

060806117

ABSTRACT:
A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.

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patent: 5338697 (1994-08-01), Aoki et al.
patent: 5438019 (1995-08-01), Sandhu
patent: 5500380 (1996-03-01), Kim
patent: 5563093 (1996-10-01), Koda et al.
patent: 5753555 (1998-05-01), Hada
patent: 5817559 (1998-10-01), Mizuno et al.

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