Semiconductor device and production method thereof

Details Semiconductor device and production method thereof Semiconductor device and production method thereof

2005-02-01

2005-02-01

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S756000, C438S792000

Reexamination Certificate

active

06849513

ABSTRACT:
The present invention provides a MOS semiconductor device which enables gate leakage current reduction with a thinner gate dielectric film for higher speed, and a production method thereof. According to the present invention, a gate dielectric film6is made as follows: after forming a silicon nitride film3with a specified thickness, it is annealed in an oxidizing atmosphere to form silicon oxide4on the silicon nitride film3, then this silicon oxide4is completely removed by exposure to a dissolving liquid. As a result, at depths between 0.12 nm and 0.5 nm from the top surface of the silicon nitride film3in the gate dielectric film6whose main constituent elements are silicon, nitrogen and oxygen, the nitrogen concentration is higher than the oxygen concentration. This enables the use of a thinner gate dielectric film with silicon, nitrogen and oxygen as main constituent elements while at the same time realizing reduction in leakage currents.

REFERENCES:
patent: 6150286 (2000-11-01), Sun et al.
patent: 6380056 (2002-04-01), Shue et al.
patent: 6656804 (2003-12-01), Tsujikawa et al.
patent: 6777354 (2004-08-01), Sung

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