Semiconductor device and process of producing the same

Details Semiconductor device and process of producing the same Semiconductor device and process of producing the same

1998-07-28

2000-10-17

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438382, 438238, 438263, 438264, 438257, 438262, H01L 21336

Patent

active

061330949

ABSTRACT:
The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same. Use is made of at least a two-layer structure including a first polycrystalline silicon layer of large crystal grain size and a second polycrystalline silicon layer of small crystal grain size, and the first polycrystalline silicon layer has a positive temperature dependence of resistance while the second polycrystalline layer has a negative temperature dependence of resistance, or vice versa. Moreover, the polycrystalline silicon layer of large grain size can be formed by high dose ion implantation and annealing, or by depositing the layers by chemical vapor deposition at different temperatures so as to form large-grain and small-grain layers.

REFERENCES:
patent: 5093700 (1992-03-01), Sakata
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5168075 (1992-12-01), Kuo
patent: 5204276 (1993-04-01), Nakajima et al.
patent: 5349494 (1994-09-01), Ando
patent: 5434438 (1995-07-01), Kuo
patent: 5506737 (1996-04-01), Lin et al.
patent: 5614746 (1997-03-01), Hong et al.
patent: 5840607 (1998-11-01), Yeh et al.
patent: 5888870 (1999-03-01), Gardner et al.
patent: 5960285 (1999-09-01), Hong

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