Semiconductor device and process for producing the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S221000, C438S425000, C438S435000, C257SE21546

Reexamination Certificate

active

11108827

ABSTRACT:
A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

REFERENCES:
patent: 3634204 (1972-01-01), Dhaka
patent: 4580330 (1986-04-01), Pollack et al.
patent: 4923821 (1990-05-01), Namose
patent: 5321289 (1994-06-01), Baba et al.
patent: 5360753 (1994-11-01), Park et al.
patent: 5434447 (1995-07-01), Miyashita et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5455194 (1995-10-01), Vasquez et al.
patent: 5492858 (1996-02-01), Bose et al.
patent: 5504034 (1996-04-01), Rapisarda
patent: 5536675 (1996-07-01), Bohr
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5651858 (1997-07-01), Lin
patent: 5658822 (1997-08-01), Wu et al.
patent: 5871659 (1999-02-01), Sakano et al.
patent: 5933748 (1999-08-01), Chou et al.
patent: 6242323 (2001-06-01), Ishitsuka et al.
patent: 6548362 (2003-04-01), Wu
patent: 6559027 (2003-05-01), Ishitsuka et al.
patent: 6635945 (2003-10-01), Ishitsuka et al.
patent: 6727161 (2004-04-01), Ahn et al.
patent: 6881646 (2005-04-01), Ishitsuka et al.
patent: 86-1-00527 (1987-09-01), None
patent: 423722 (1990-10-01), None
patent: 423722 (1990-10-01), None
patent: 459397 (1991-05-01), None
patent: 459397 (1991-05-01), None
patent: 660391 (1994-12-01), None
patent: 660391 (1997-03-01), None
patent: 61-1008944 (1986-01-01), None
patent: 63-143835 (1988-06-01), None
patent: 2-260660 (1990-10-01), None
patent: 4-303942 (1992-10-01), None
patent: 8-97277 (1996-04-01), None
patent: 09-129720 (1997-05-01), None
patent: 98-12742 (1998-03-01), None
patent: 96-02070 (1996-01-01), None
patent: WO 97/14175 (1997-04-01), None
Tamaki, et al., “Evaluation of Dislocation Generation in U-Groove Isolation,” Solid-State Science and Technology, Mar. 1988.
Bryant, et al., “Characteristics of CMOS Device Isolation for the ULSI Age,” IEEE 1994.

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