Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-22
2008-07-22
Quach, Tuan N. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S221000, C438S425000, C438S435000, C257SE21546
Reexamination Certificate
active
07402473
ABSTRACT:
A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.
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Fukuda Kazushi
Horibe Shinichi
Ikeda Shuji
Ishitsuka Norio
Kobayashi Masamichi
Antonelli, Terry Stout & Kraus, LLP.
Hitachi ULSI Systems Co. Ltd.
Quach Tuan N.
Renesas Technology Corp.
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