Semiconductor device and process for fabricating the same

Details Semiconductor device and process for fabricating the same Semiconductor device and process for fabricating the same

2005-07-26

2005-07-26

Brock, II, Paul E (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S397000, C438S739000

Reexamination Certificate

active

06921693

ABSTRACT:
A semiconductor device comprising: a first insulation film60formed above a base substrate10; a second insulation film61formed on the first insulation film and having different etching characteristics from the first insulation film; and a capacitor79including a storage electrode68formed on the second insulation film, projected therefrom, the storage electrode being formed, extended downward from side surfaces of the second insulation film. The lower ends of the storage electrodes are formed partially below the etching stopper film, whereby the storage electrodes are fixed by the etching stopper film. Accordingly, the storage electrodes are prevented from peeling off in processing, such as wet etching, etc. The semiconductor device can be fabricated at high yields.

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