Semiconductor device and methods of manufacturing the same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S633000, C438S631000, C438S256000, C438S253000, C438S279000, C257SE21585, C257SE21648, C257S306000, C257SE27088

Reexamination Certificate

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07968447

ABSTRACT:
A semiconductor device may include plugs disposed in a zigzag pattern, interconnections electrically connected to the plugs and a protection pattern which is interposed between the plugs and the interconnections to selectively expose the plugs. The interconnections may include a connection portion which is in contact with plugs selectively exposed by the protection pattern. A method of manufacturing a semiconductor device includes, after forming a molding pattern and a mask pattern, selectively etching a protection layer using the mask pattern to form a protection pattern exposing a plug.

REFERENCES:
patent: 7776747 (2010-08-01), Ban et al.
patent: 2007/0049010 (2007-03-01), Burgess et al.
patent: 2008/0054483 (2008-03-01), Lee et al.
patent: 2008/0203456 (2008-08-01), Kim
patent: 2003-60028 (2003-02-01), None
patent: 2000-045452 (2000-07-01), None
patent: 10-2005-0110785 (2005-11-01), None

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