Semiconductor device and methods of forming the same

Details Semiconductor device and methods of forming the same Semiconductor device and methods of forming the same

2007-08-20

2010-10-05

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S639000, C257S768000, C257S774000, C257SE21578, C257SE23145

Reexamination Certificate

active

07807571

ABSTRACT:
An example embodiment provides a method of forming a conductive pattern in a semiconductor device. The method includes forming one or more dielectric layers over a first conductive pattern formed on a substrate; forming an opening in the one or more dielectric layers to expose a portion of the first conductive pattern, forming a growth promoting layer over the exposed portion of the first conductive pattern and the one or more dielectric layers, forming a growth inhibiting layer over a portion of the growth promoting layer, and forming the second conductive layer in the opening.

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