Semiconductor device and method of providing a thermal...

Details Semiconductor device and method of providing a thermal... Semiconductor device and method of providing a thermal...

2008-07-15

2010-11-30

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S584000, C257S720000

Reexamination Certificate

active

07842607

ABSTRACT:
A semiconductor device has a conductive via formed around a perimeter of the semiconductor die. First and second conductive layers are formed on opposite sides of the semiconductor die and thermally connected to the conductive via. An insulating layer is formed over the semiconductor die. A portion of the insulating layer is removed to expose the first conductive layer and a thermal dissipation region of semiconductor die. A thermal via is formed through the insulating layer to the first conductive layer. A thermally conductive layer is formed over the thermal dissipation region and thermal via. A thermal conduction path is formed from the thermal dissipation region through the thermally conductive layer, thermal via, first conductive layer, conductive via, and second conductive layer. The thermal conduction path terminates in an external thermal ground point. The thermally conductive layer provides shielding for electromagnetic interference.

REFERENCES:
patent: 5600541 (1997-02-01), Bone et al.
patent: 6507115 (2003-01-01), Hofstee et al.
patent: 7271479 (2007-09-01), Zhao et al.
patent: 2008/0001283 (2008-01-01), Lee et al.
patent: 2008/0116588 (2008-05-01), Van Kleef et al.

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